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Articles (31)
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1

Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) using a Single Ohmic/Schottky Process Scheme

Sung, Woongje, Baliga, B. Jayant

Journal:

IEEE Electron Device Letters

Année:

2016

Langue:

english

Fichier:

PDF, 478 KB

english, 2016

2

A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension

Sung, Woongje, Van Brunt, Edward, Baliga, B. J., Huang, Alex Q.

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 440 KB

english, 2011

3

Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

Sung, Woongje, Baliga, B. Jayant, Huang, Alex Q.

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 2.69 MB

english, 2016

4

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices

Sung, Woongje, Huang, Alex Q., Baliga, B. Jayant

Journal:

IEEE Electron Device Letters

Année:

2015

Langue:

english

Fichier:

PDF, 1003 KB

english, 2015

5

A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: the Hybrid Junction Termination Extension (Hybrid-JTE)

Sung, Woongje, Baliga, B. Jayant

Journal:

IEEE Electron Device Letters

Année:

2016

Langue:

english

Fichier:

PDF, 551 KB

english, 2016

6

A Comparative Study 4500-V Edge Termination Techniques for SiC Devices

Sung, Woongje, Baliga, B. Jayant

Journal:

IEEE Transactions on Electron Devices

Année:

2017

Langue:

english

Fichier:

PDF, 2.45 MB

english, 2017

7

On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET)

Sung, Woongje, Baliga, B. J.

Journal:

IEEE Transactions on Industrial Electronics

Année:

2017

Langue:

english

Fichier:

PDF, 804 KB

english, 2017

8

Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

Jiang, Yifan, Sung, Woongje, Baliga, Jayant, Wang, Sizhen, Lee, Bongmook, Huang, Alex

Journal:

Journal of Electronic Materials

Année:

2017

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2017

9

Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance

Yun, Nick, Kim, Dongyoung, Lynch, Justin, Morgan, Adam J., Sung, Woongje, Kang, Minseok, Agarwal, Anant, Green, Ronald, Lelis, Aivars

Journal:

IEEE Transactions on Electron Devices

Année:

2020

Fichier:

PDF, 5.20 MB

2020

10

[American Institute of Aeronautics and Astronautics 9th AIAA Aviation Technology, Integration, and Operations Conference (ATIO) - Hilton Head, South Carolina ()] 9th AIAA Aviation Technology, Integration, and Operations Conference (ATIO) - Advanced Vehicles Modeling for the Next Generation Air Transportation System (NextGen Vehicle Integration NRA)

Kirby, Michelle, Ran, Hongjun, Dufresne, Stephane, Sung, Woongje, Mavris, Dimitri, Burdette, Graham

Année:

2009

Langue:

english

Fichier:

PDF, 1.41 MB

english, 2009

11

[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - Design and investigation of frequency capability of 15kV 4H-SiC IGBT

Woongje Sung,, Wang, Jun, Huang, Alex Q., Baliga, B. Jayant

Année:

2009

Langue:

english

Fichier:

PDF, 224 KB

english, 2009

12

[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel

Sung, Woongje, Han, Kijeong, Baliga, B. Jayant

Année:

2017

Fichier:

PDF, 982 KB

2017

13

[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Accumulation channel vs. inversion channel 1.2 kV rated 4H-SiC buffered-gate (BG) MOSFETs: Analysis and experimental results

Han, Kijeong, Baliga, B. Jayant, Sung, Woongje

Année:

2018

Langue:

english

Fichier:

PDF, 853 KB

english, 2018

14

[ASME ASME 2014 8th International Conference on Energy Sustainability collocated with the ASME 2014 12th International Conference on Fuel Cell Science, Engineering and Technology - Boston, Massachusetts, USA (Monday 30 June 2014)] Volume 2: Economic, Environmental, and Policy Aspects of Alternate Energy; Fuels and Infrastructure, Biofuels and Energy Storage; High Performance Buildings; Solar Buildings, Including Solar Climate Control/Heating/Cooling; Sustainable Cities and Communities, Including Transportation; Thermofluid Analysis of Energy Systems, Including Exergy and Thermoeconomics - Towards a Data Calibrated, Simulation-Based Campus Energy Analysis Environment for Situational Awareness and Future Energy System Planning

Duncan, Scott, Balchanos, Michael, Sung, Woongje, Kim, Juhyun, Li, Yongchang, Issac, Yanal, Mavris, Dimitri, Coulon, Adam

Année:

2014

Langue:

english

Fichier:

PDF, 1.56 MB

english, 2014

15

[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Design Considerations for High Voltage SiC Power Devices: An Experimental Investigation into Channel Pinching of 10kV SiC Junction Barrier Schottky (JBS) Diodes

Lynch, Jusitn, Yun, Nick, Sung, Woongje

Année:

2019

Fichier:

PDF, 1.61 MB

2019

16

Smart grid technologies

Jun Wang, Huang, A., Woongje Sung, Yu Liu, Baliga, B.J.

Journal:

IEEE Industrial Electronics Magazine

Année:

2009

Langue:

english

Fichier:

PDF, 2.22 MB

english, 2009

17

A Comparative Study of Gate Structures for 9.4-kV 4H-SiC Normally On Vertical JFETs

Sung, Woongje, Van Brunt, Edward, Baliga, B. Jayant, Huang, Alex Q.

Journal:

IEEE Transactions on Electron Devices

Année:

2012

Langue:

english

Fichier:

PDF, 408 KB

english, 2012

18

A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA

Sung, Woongje, Baliga, B.J., Huang, Alex Q.

Journal:

Materials Science Forum

Année:

2012

Langue:

english

Fichier:

PDF, 286 KB

english, 2012

19

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

Sung, Woongje, Huang, Alex Q., Baliga, B. J., Ji, Inhwan, Ke, Haotao, Hopkins, Douglas C.

Année:

2015

Langue:

english

Fichier:

PDF, 747 KB

english, 2015

20

[IEEE 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Blacksburg, VA, USA (2015.11.2-2015.11.4)] 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Turn-on capability of 22 kV SiC Emitter Turn-off (ETO) Thyristor

Liang, Lin, Huang, Alex Q., Sung, Woongje, Lee, Meng-Chia, Song, Xiaoqing, Peng, Chang, Cheng, Lin, Palmour, John, Scozzie, Charles

Année:

2015

Langue:

english

Fichier:

PDF, 832 KB

english, 2015

21

[American Institute of Aeronautics and Astronautics 15th International Energy Conversion Engineering Conference - Atlanta, GA ()] 15th International Energy Conversion Engineering Conference - Modeling the Impact of Thermal Demand Response on a Campus Chilled Water Plant and Assessment of Campus-wide Load Shift Potential

Kim, Ju Hyun, Sung, Woongje, Balchanos, Michael G., Duncan, Scott J., Mavris, Dimitri N.

Langue:

english

Fichier:

PDF, 1.53 MB

english

22

Split-Gate 1.2 kV 4H-SiC MOSFET: Analysis and Experimental Validation

Han, Kijeong, Baliga, B. J., Sung, Woongje

Journal:

IEEE Electron Device Letters

Année:

2017

Langue:

english

Fichier:

PDF, 289 KB

english, 2017

23

A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results

Han, Kijeong, Baliga, B. J., Sung, Woongje

Journal:

IEEE Electron Device Letters

Année:

2018

Langue:

english

Fichier:

PDF, 915 KB

english, 2018

24

[IEEE 2017 IEEE 5th Workshop on Wide-Bandgap Power Devices and Applications (WiPDA) - Albuquerque, NM (2017.10.30-2017.11.1)] 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)

Sung, Woongje, Han, Kijeong, Baliga, B. J.

Année:

2017

Fichier:

PDF, 432 KB

2017

25

[American Institute of Aeronautics and Astronautics 2018 International Energy Conversion Engineering Conference - Cincinnati, Ohio ()] 2018 International Energy Conversion Engineering Conference - A Data-driven Situational Awareness Approach to Monitoring Campus-wide Power Consumption

Fu, Haoyun, Kampezidou, Styliani, Sung, WoongJe, Duncan, Scott, Mavris, Dimitri N.

Langue:

english

Fichier:

PDF, 1.25 MB

english

26

Area Efficient, 600V 4H-SiC JBS Diode Integrated MOSFETs (JBSFETs) for Power Converter Applications

Yun, Nick, Lynch, Justin, Sung, Woongje

Journal:

IEEE Journal of Emerging and Selected Topics in Power Electronics

Année:

2019

Langue:

english

Fichier:

PDF, 1.64 MB

english, 2019

27

An Efficient Design Approach to Optimize the Drift Layer of Unipolar Power Devices in 4H-SiC

Isukapati, Sundar Babu, Sung, Woongje

Journal:

IEEE Journal of the Electron Devices Society

Année:

2020

Langue:

english

Fichier:

PDF, 877 KB

english, 2020

28

[IEEE 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Raleigh, NC, USA (2019.10.29-2019.10.31)] 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - A New Junction Barrier Schottky Diode Using a Novel Lateral Architecture on a 4H-SiC Substrate

Lynch, Justin, Yun, Nick, Sung, Woongje

Année:

2019

Langue:

english

Fichier:

PDF, 973 KB

english, 2019

29

[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness

Kim, Dongyoung, Morgan, Adam J, Yun, Nick, Sung, Woongje, Agarwal, Anant, Kaplar, Robert

Année:

2020

Fichier:

PDF, 1.31 MB

2020

30

Empirical Assessment of Deep Gaussian Process Surrogate Models for Engineering Problems

Rajaram, Dushhyanth, Puranik, Tejas G., Ashwin Renganathan, S., Sung, WoongJe, Fischer, Olivia Pinon, Mavris, Dimitri N., Ramamurthy, Arun

Journal:

Journal of Aircraft

Année:

2020

Fichier:

PDF, 4.39 MB

2020

31

Design and Fabrication Approaches of 400â600 V 4H-SiC Lateral MOSFETs for Emerging Power ICs Application

Yun, Nick, Sung, Woongje

Journal:

IEEE Transactions on Electron Devices

Année:

2020

Fichier:

PDF, 2.57 MB

2020